https://nrc-publications.canada.ca/eng/view/object/?id=8d472442-7a67-495a-8d2d-aeee49a23014
Interfacial growth of HfOxNy gate dielectrics deposited using [(C2H5)2N]4Hf with O2 and NO - NRC...
Interfacial growth of HfOxNy gate dielectrics deposited using [(C2H5)2N]4Hf with O2 and NO
https://webbook.nist.gov/cgi/inchi/InChI%3D1S/C5H12N2/c1-4-6-5-7(2)3/h5H%2C4H2%2C1-3H3
(CH3)2N-CH=N-C2H5
chn
https://nrc-publications.canada.ca/fra/voir/objet/?id=8d472442-7a67-495a-8d2d-aeee49a23014
Interfacial growth of HfOxNy gate dielectrics deposited using [(C2H5)2N]4Hf with O2 and NO -...
Interfacial growth of HfOxNy gate dielectrics deposited using [(C2H5)2N]4Hf with O2 and NO
https://iris.cnr.it/handle/20.500.14243/344973
A theoretical investigation of the reaction between the amidogen, NH, and the ethyl, C2H5,...
of the