https://nrc-publications.canada.ca/eng/view/object/?id=c11b9dcd-64d1-4c42-b2fe-a8673f1a52d8
Nitrogen distribution and oxidation of HfOxNy gate dielectrics deposited by MOCVD using [C2H52N]4Hf...
Nitrogen distribution and oxidation of HfOxNy gate dielectrics deposited by MOCVD using [C2H52N]4Hf with NO and O2