https://silvaco.com/ja/simulation-standard/current-collapse-phenomenon-in-gan-hfets-resulting-from-intentional-bulk-iron-fe-doping-and-un-intentional-interface-traps/
Current Collapse Phenomenon in GaN HFETs resulting from Intentional Bulk Iron (Fe) Doping and...
Jul 9, 2021 - The Gallium Nitride-based material family has fundamental material properties which make it an attractive candidate