https://cpb.iphy.ac.cn/en/article/doi/10.1088/1674-1056/abb30d?viewType=HTML
Influences of increasing gate stem height on DC and RF performances of InAlAs/InGaAs InP-based HEMTs
The T-gate stem height of InAlAs/InGaAs InP-based high electron mobility transistor (HEMT) is increased from 165 nm to 250 nm. The influences of increasing the...
influencesincreasinggatestemheight
https://pure.lib.cgu.edu.tw/en/publications/raman-and-photoluminescence-analyses-of-the-crystalline-inalas-la/
Raman and photoluminescence analyses of the crystalline InAlAs layer grown on InP substrate - Chang...
of thegrown onramanphotoluminescenceanalyses