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https://infoscience.epfl.ch/entities/publication/73a8fd07-2e1b-47d7-8245-a0dd5510d30a Design Space of Twin Gate Junctionless Vertical Slit Field Effect Transistors In this work, we present the technological constrains and limitations in the design of ultra-thin body Junctionless Vertical Slit Field Effect Transistor (JL... design space field effect twin gate https://infoscience.epfl.ch/entities/publication/76eb96e3-8682-439b-872e-86e193048912 Charge-based modeling of ultra narrow junctionless cylindrical nanowire FETs This brief proposes an analytical approach to model the DC electrical behavior of extremely narrow cylindrical junctionless nanowire field-effect transistors... charge based modeling ultra narrow https://infoscience.epfl.ch/entities/publication/89e5c7d3-48e6-4ec5-89f5-0c7c765eba61 Downscaling and Short Channel Effects in Twin Gate Junctionless Vertical Slit FETs we present the performance constraints in the design of ultra-thin body Junctionless Vertical Slit Field Effect Transistor (JL VeSFET). A design space that... https://infoscience.epfl.ch/entities/publication/d9dd4608-6854-4476-b529-32be3863e369 Modeling Junctionless Metal-Oxide-Semiconductor Field-Effect Transistor Metal-oxide semiconductor (MOS) field-effect transistor (FET) scaling is following the prediction of the Moore's law for the past 45 years, a key factor that... metal oxide field effect modeling semiconductor transistor https://infoscience.epfl.ch/entities/publication/8ea86a6b-8541-478c-bc8d-211c3ed66c0d Modeling Interface Charge Traps in Junctionless FETs, Including Temperature Effects In this article, an analytical predictive model of interface charge traps in symmetric, long-channel double-gate, junctionless transistors (JLTs) is proposed... modeling interface charge traps fets https://liu.diva-portal.org/smash/record.jsf?pid=diva2%3A1729912 Transcapacitances Modeling in ultra-thin gate-all-around junctionless nanowire FETs, including 2D... https://infoscience.epfl.ch/entities/publication/4f7d8a0d-6215-4157-a1ed-f857d1a0bd8c Nonhysteretic Condition in Negative Capacitance Junctionless FETs This article analyzes the design space stability of negative capacitance double-gate junctionless field-effect transistors (NCDG JLFETs). Using analytical... condition negative capacitance fets https://technav.ieee.org/topic/junctionless-nanowire-transistors Junctionless Nanowire Transistors on IEEE Technology Navigator Junctionless Nanowire Transistors - IEEE Technology Navigator. Connecting You to the IEEE Universe of Information transistors ieee technology navigator https://scholars.lib.ntu.edu.tw/entities/publication/329560f9-28ff-44d7-a48b-f5f1e1327d5d Junctionless Gate-all-around pFETs on Si with In-situ doped Ge channel https://liu.diva-portal.org/smash/record.jsf?faces-redirect=true&language=no&searchType=SIMPLE&query=&af=%5B%5D&aq=%5B%5B%5D%5D&aq2=%5B%5B%5D%5D&aqe=%5B%5D&pid=diva2%3A1729912&noOfRows=50&sortOrder=author_sort_asc&sortOrder2=title_sort_asc&onlyFullText=false&sf=all Transcapacitances Modeling in ultra-thin gate-all-around junctionless nanowire FETs, including 2D... https://infoscience.epfl.ch/entities/publication/ff566a7c-1ec7-434a-aac9-f74f09ccac65 Carrier Mobility Extraction Methodology in Junctionless and Inversion-Mode FETs In this paper, we propose a new method to extract the free carrier mobility in junctionless (JL) double-gate FETs biased in accumulation. We show that, in... carrier mobility extraction methodology inversion https://liu.diva-portal.org/smash/record.jsf?faces-redirect=true&language=en&searchType=SIMPLE&query=&af=%5B%5D&aq=%5B%5B%5D%5D&aq2=%5B%5B%5D%5D&aqe=%5B%5D&pid=diva2%3A1729912&noOfRows=50&sortOrder=author_sort_asc&sortOrder2=title_sort_asc&onlyFullText=false&sf=all Transcapacitances Modeling in ultra-thin gate-all-around junctionless nanowire FETs, including 2D... https://infoscience.epfl.ch/entities/publication/7664fd0e-321a-4a8d-8213-25635f5643c1 Analytical Modeling of Double-Gate and Nanowire Junctionless ISFETs In this article, we present a theoretical analysis of a junctionless (JL), ion-sensitive, field-effect-transistor (ISFET), self-consistently combining the... double gate analytical modeling