https://www.lawyersnjurists.com/article/development-of-improved-i-v-characteristics-models-for-nanometer-size-mesfets/
Development of Improved I-V Characteristics Models for Nanometer Size MESFETs | The Lawyers &...
Explore advanced I-V modeling techniques for nanometer-scale MESFETs to enhance semiconductor device performance
https://pure.psu.edu/en/publications/high-performance-refractory-gate-self-aligned-gaas-mesfets-fabric/
HIGH PERFORMANCE REFRACTORY GATE SELF-ALIGNED GAAS MESFETS FABRICATED BY ARSINE AMBIENT RAPID...