https://www.infineon.com/product-information/power/igbt/igbt-discretes/discrete-igbt-with-anti-parallel-diode/650v-1200v-1350v-1600v-next-generation-reverse-conducting-igbt?intc=202009_igbtselectiongraphic_en_ipc_1200vreverseconductingr5
650 V to 1600 V RC-H Reverse Conducting IGBTs | Infineon Technologies
650 V to 1600 V RC-H Reverse Conducting IGBTs | Infineon Technologies
650 v1600rc
https://www.infineon.com/products/power/mosfet/silicon-carbide/650v
650 V Silicon Carbide MOSFETs | Infineon Technologies
650 V Silicon Carbide MOSFETs | Infineon Technologies
650 vsilicon carbidemosfetsinfineontechnologies
https://www.electronicdesign.com/technologies/power/power-supply/discrete-power-semis/article/21196950/650-v-sic-diodes-offer-dual-configurations
650 V SiC Diodes Offer Dual Configurations | Electronic Design
New dual-configuration Schottky silicon-carbide (SiC) diodes from STMicroelectronics are the first such devices in the industry with a voltage rating of 650 V...
650 vsic diodesofferdualconfigurations
https://www.electronicdesign.com/technologies/power/article/21799750/discrete-650-v-rectifiers-leverage-sic-technology
Discrete 650-V Rectifiers Leverage SiC Technology | Electronic Design
Cree expanded its Z-Rec Schottky diode family with two discrete 650-V silicon-carbide (SiC) rectifiers that offered higher switching frequencies and...
650 vdiscreterectifiersleveragesic