https://www.electronicdesign.com/technologies/power/power-supply/discrete-power-semis/article/21195306/very-low-basal-plane-dislocation-4h-silicon-carbide-epitaxial-wafers
Cree, Inc. announces its latest silicon carbide (SiC) offering with low basal plane dislocation (LBPD) 100-mm 4H SiC epitaxial wafers.
basal planesilicon carbidelowdislocationepitaxial