https://beol-bd.com/
BEOL – Bangladesh Edible Oil Limited
edible oilbeolbangladeshlimited
https://arxiv.org/html/2604.11333v1
ALD W-Doped SnO2 TFTs for Indium-Free BEOL Electronics
aldwtftsindiumfree
https://research.ibm.com/publications/impact-of-hf-based-cleaning-solutions-on-via-resistance-for-sub-10-nm-beol-structures
Impact of HF-based cleaning solutions on via resistance for sub-10 nm BEOL structures for...
Impact of HF-based cleaning solutions on via resistance for sub-10 nm BEOL structures for Microelectronic Engineering by B. Peethala et al.
https://research.ibm.com/publications/fabrication-of-dual-damascene-beol-structures-using-a-multi-level-multiple-exposure-mlme-scheme-part-2-rie-based-pattern-transfer-and-completion-of-dual-damascene-process-yielding-an-electrically-functional-via-chain
Fabrication of dual damascene BEOL structures using a multi-level multiple exposure (MLME) scheme -...
Fabrication of dual damascene BEOL structures using a multi-level multiple exposure (MLME) scheme - Part 2. RIE-based pattern transfer and completion of dual...
https://arxiv.org/abs/2604.11333
[2604.11333] ALD W-Doped SnO$_2$ TFTs for Indium-Free BEOL Electronics
Abstract page for arXiv paper 2604.11333: ALD W-Doped SnO$_2$ TFTs for Indium-Free BEOL Electronics
https://research.ibm.com/publications/time-dependent-series-resistance-and-implications-for-voltage-acceleration-models-in-beol-tddb
Time-dependent series resistance and implications for voltage acceleration models in BEOL TDDB for...
Time-dependent series resistance and implications for voltage acceleration models in BEOL TDDB for IRPS 2016 by Andrew Kim et al.
https://research.ibm.com/publications/analog-resistive-switching-in-beol-ferroelectric-synaptic-weights
Analog Resistive Switching in BEOL, Ferroelectric Synaptic Weights for IEEE J-EDS - IBM Research
Analog Resistive Switching in BEOL, Ferroelectric Synaptic Weights for IEEE J-EDS by Laura Begon-Lours et al.
https://research.ibm.com/publications/a-45-nm-cmos-node-culow-k-ultra-low-k-pecvd-sicoh-k24-beol-technology
A 45 nm CMOS node Cu/low-k/ ULtra low-k PECVD SiCOH (k=2.4) BEOL technology for IEDM 2006 - IBM...
A 45 nm CMOS node Cu/low-k/ ULtra low-k PECVD SiCOH (k=2.4) BEOL technology for IEDM 2006 by S. Sankaran et al.
https://research.ibm.com/publications/the-extreme-extendibility-of-cu-and-post-cu-dual-damascene-beol-interconnect-technology
The Extreme Extendibility of Cu and Post-Cu Dual Damascene BEOL Interconnect Technology for IEDM...
The Extreme Extendibility of Cu and Post-Cu Dual Damascene BEOL Interconnect Technology for IEDM 2024 by Daniel Edelstein et al.
https://research.ibm.com/publications/a-porous-sicoh-dielectric-with-k24-for-high-performance-beol-interconnects
A porous SiCOH dielectric with k=2.4 for high performance BEOL interconnects for ADMETA 2006 - IBM...
A porous SiCOH dielectric with k=2.4 for high performance BEOL interconnects for ADMETA 2006 by S. Gates et al.
https://research.ibm.com/publications/metrology-design-co-optimization-for-beol-dimensional-characterization-using-scatterometry
Metrology-Design Co-Optimization for BEOL dimensional characterization using scatterometry for SPIE...
Metrology-Design Co-Optimization for BEOL dimensional characterization using scatterometry for SPIE Advanced Lithography + Patterning 2025 by Stefan Schoeche...
design cometrologyoptimization
https://pure.psu.edu/en/publications/vertical-2t-nc-feram-demonstration-beol-read-transistor-for-4fsup/
Vertical 2T-nC FeRAM Demonstration: BEOL Read Transistor for 4F2 Memory Strings and Two-Terminal...
https://research.ibm.com/publications/experimental-study-of-pvd-cucvd-co-bilayer-dissolution-for-beol-cu-interconnect-applications
Experimental study of PVD Cu/CVD Co bilayer dissolution for BEOL Cu interconnect applications for...
Experimental study of PVD Cu/CVD Co bilayer dissolution for BEOL Cu interconnect applications for ECS Meeting 2017 by X. Sun et al.
https://publica.fraunhofer.de/entities/publication/48efcb61-7f83-4b24-a997-3b2002978b9f
Crack identification and evaluation in BEoL stacks of two different samples utilizing acoustic...
A novel approach is presented to evaluate the mechanical stability of back end of line (BEoL) stacks. A SRAM test vehicle manufactured in 28 nm technology with...
https://publica.fraunhofer.de/entities/publication/54bc7bbc-05cd-474c-b152-e6e7651af100
Improvement of yield and reliability of sub-30 nm structures with finite element analysis in BEOL...