https://www.nist.gov/publications/gateless-and-reversible-carrier-density-tunability-epitaxial-graphene-devices
Gateless and reversible carrier density tunability in epitaxial graphene devices functionalized...
carrier densityreversible
https://www.nist.gov/publications/low-carrier-density-epitaxial-graphene-devices-sic
Low carrier density epitaxial graphene devices on SiC | NIST
Oct 12, 2021 - Monolayer epitaxial graphene grown on a hexagonal silicon carbide (SiC) substrate is typically found to be heavily n-doped (10e13 cm-2) and in most devices made
carrier densitylowepitaxialgraphenedevices