https://cpb.iphy.ac.cn/en/article/doi/10.1088/1674-1056/ab6966
Role of remote Coulomb scattering on the hole mobility at cryogenic temperatures in SOI p-MOSFETs
The impacts of remote Coulomb scattering (RCS) on hole mobility in ultra-thin body silicon-on-insulator (UTB SOI) p-MOSFETs at cryogenic temperatures are...
coulomb scatteringon thehole mobilityroleremote