https://cpb.iphy.ac.cn/en/article/doi/10.1088/1674-1056/28/8/086801
Organic field-effect transistor floating-gate memory using polysilicon as charge trapping layer
In this study, we present an organic field-effect transistor floating-gate memory using polysilicon (poly-Si) as a charge trapping layer. The memory device is...
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Dincast Iron Stainless Steel Floating Ss Brass Ball Gate Butterfly Control Swing Lug Check Angle...
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