https://www.infineon.com/part/IGC019S06S1
The IGB019S06S1 is a 60 V normally-off e-mode power transistor housed in a small PQFN 3x5 package, enabling high power density designs. Thanks to its very low...
gan transistorsinfineon technologies
https://www.businesswire.com/news/home/20210106005862/en/Teledyne-e2v-HiRel-Unveils-Two-High-Power-GaN-HEMTs-to-its-650-V-Family
Teledyne HiRel's new high voltage GaN HEMTs for hi-rel applications is now available in lower current 15 A and 30 A versions.
two highgan hemtsteledynehirelunveils
https://www.infineon.com/part/GS-065-150-1-D2
GS-065-150-1-D2 - GaN transistors (GaN HEMTs) | Infineon Technologies
gan transistorsgsinfineon
https://www.electronicdesign.com/markets/energy/article/21777120/gan-hemts-get-boost-to-save-power
In correlation with its maturation, Wi-Fi technology (or any technology for that matter) requires a consistent grade of power-saving technology to counter the...
gan hemtsget boostpower electronicsavedesign
https://www.scirp.org/reference/ReferencesPapers?ReferenceID=1957680
Pribble, W.L., et al. (2002) Applications of SiC MESFETs and GaN HEMTs in Power Amplifier Design. IEEE MTT-S International Microwave Symposium Digest, 2-7 June...
w let alapplicationssic