https://www.sciencedaily.com/releases/2007/10/071016131407.htm
For the first time theoretical modeling has provided a glimpse into how promising dielectric materials are able to trap charges, something which may affect the...
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https://www.preprints.org/manuscript/202301.0174
We report the electrical properties of Al0.3Ga0.7N/GaN heterojunction field effect transistor (HFET) structures with a Ga2O3 passivation layer grown by...
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