https://research.ibm.com/publications/tsvfet-proximity-study-using-dense-addressable-transistor-arrays
TSV/FET proximity study using dense addressable transistor arrays for IRPS 2015 - IBM Research
TSV/FET proximity study using dense addressable transistor arrays for IRPS 2015 by Raphael P. Robertazzi et al.
https://learn.microsoft.com/de-de/windows-hardware/drivers/kernel/plug-and-play-minor-irps
Plug and Play Minor IRPs - Windows drivers | Microsoft Learn
Plug and Play Minor IRPs
plug and playwindows driversminorirpsmicrosoft
https://research.ibm.com/publications/write-error-rate-of-spin-transfer-torque-mram-invited
Write-error-rate of Spin-Transfer-Torque MRAM (Invited) for IRPS 2023 - IBM Research
Write-error-rate of Spin-Transfer-Torque MRAM (Invited) for IRPS 2023 by Daniel C. Worledge
https://research.ibm.com/publications/electromigration-damage-in-aluminum-film-conductors--1
Electromigration damage in aluminum film conductors for IRPS 1970 - IBM Research
Electromigration damage in aluminum film conductors for IRPS 1970 by M.J. Attardo et al.
damagealuminumfilm
https://www.irps.org/
IEEE - IRPS - International Reliability Physics Symposium
For 60 years, IRPS has been the premiere conference for engineers and scientists to present new and original work in the area of microelectronics reliability.
ieeeirpsinternationalreliabilityphysics
https://economictimes.indiatimes.com/industry/telecom/telecom-news/irps-of-rcom-two-units-told-to-submit-progress-report/articleshow/69226508.cms
RCom: IRPs of RCom, two units told to submit progress report - The Economic Times
NCLT has held that stay on insolvency process of RCom and its 2 units has been vacated by NCLAT.
https://research.ibm.com/publications/sram-ser-in-90-130-and-180-nm-bulk-and-soi-technologies--1
SRAM SER in 90, 130 and 180 NM bulk and SOI technologies for IRPS 2004 - IBM Research
SRAM SER in 90, 130 and 180 NM bulk and SOI technologies for IRPS 2004 by Ethan H. Cannon et al.
https://research.ibm.com/publications/calculating-the-error-in-long-term-oxide-reliability-estimates--1
Calculating the error in long term oxide reliability estimates for IRPS 2001 - IBM Research
Calculating the error in long term oxide reliability estimates for IRPS 2001 by B.P. Linder et al.
https://research.ibm.com/publications/line-edge-roughness-and-spacing-effect-on-low-k-tddb-characteristics
Line edge roughness and spacing effect on low-k TDDB characteristics for IRPS 2008 - IBM Research
Line edge roughness and spacing effect on low-k TDDB characteristics for IRPS 2008 by F. Chen et al.
https://research.ibm.com/publications/characterization-of-the-vlessinfgreatertlessinfgreater-instability-in-siolessinfgreater2lessinfgreater-hfolessinfgreater2lessinfgreater-gate-dielectrics
Characterization of the VT-instability in SiO2 / HfO2 gate dielectrics for IRPS 2003 - IBM Research