https://www.nist.gov/publications/arsenic-induced-ge-island-morphology-changes-during-molecular-beam-epitaxy-ge-si001-0
Atomic force microscopy is used to investigate a series of arsenic-mediated growth experiments in the molecular beam epitaxy of Ge on Si(00 1).
molecular beam epitaxyarsenicinducedgeisland
https://createc.de/MBE/
Molecular Beam Epitaxy is an epitaxy method for the thin-film deposition on single crystals.
molecular beam epitaxy