https://www.nxp.com/products/radio-frequency-rf/legacy-rf/legacy-rf-wideband-transistors/npn-wideband-silicon-rf-transistor:BFU550A
NPN Wideband Silicon RF Transistor | NXP Semiconductors
Small-signal NPN wideband transistor delivers 18.5dB gain at 900 MHz with low noise figure and high transition frequency for RF amplifier applications
rf transistornpnwidebandsiliconnxp
https://www.nxp.com/products/radio-frequency-rf/legacy-rf/legacy-rf-wideband-transistors/npn-wideband-silicon-rf-transistor:BFU550XR
NPN Wideband Silicon RF Transistor | NXP Semiconductors
Wideband silicon NPN RF transistor for low-noise amplifiers delivers high gain and stable performance up to 2 GHz in wireless communication systems
rf transistornpnwidebandsiliconnxp
https://www.nxp.com/products/radio-frequency-rf/legacy-rf/legacy-rf-wideband-transistors/npn-wideband-silicon-germanium-rf-transistor:BFU790F?tab=Buy_Parametric_Tab
NPN Wideband Silicon Germanium RF Transistor | NXP Semiconductors
High-performance SiGe transistor optimized for wideband amplification up to 2.5 GHz, delivering 18 dB gain for demanding RF applications
silicon germaniumrf transistornpnwidebandnxp
https://www.nxp.com/products/radio-frequency-rf/legacy-rf/legacy-rf-wideband-transistors/npn-wideband-silicon-rf-transistor:BFU590Q?tab=Package_Quality_Tab
NPN wideband silicon RF transistor | NXP Semiconductors
Silicon RF transistor BFU590Q delivers high gain up to 6GHz and low noise figure performance for mobile base station wireless applications
rf transistornpnwidebandsiliconnxp
https://www.nxp.com/products/radio-frequency-rf/legacy-rf/legacy-rf-wideband-transistors/npn-wideband-silicon-germanium-rf-transistor:BFU768F
NPN Wideband Silicon Germanium RF Transistor | NXP Semiconductors
High-gain 2.5 GHz silicon germanium RF transistor delivers superior linearity and noise performance for wireless infrastructure applications
silicon germaniumrf transistornpnwidebandnxp
https://www.nxp.com/products/radio-frequency-rf/legacy-rf/legacy-rf-wideband-transistors/npn-wideband-silicon-germanium-rf-transistor:BFU730F?tab=Package_Quality_Tab
NPN wideband silicon RF transistor | NXP Semiconductors
High-performance SiGe RF transistor delivers 20 GHz gain and low noise for wireless infrastructure, cellular base stations and industrial applications
rf transistornpnwidebandsiliconnxp
https://www.nxp.com/products/radio-frequency-rf/legacy-rf/legacy-rf-wideband-transistors/npn-wideband-silicon-germanium-rf-transistor:BFU730F
NPN wideband silicon RF transistor | NXP Semiconductors
High-performance SiGe RF transistor delivers 20 GHz gain and low noise for wireless infrastructure, cellular base stations and industrial applications
rf transistornpnwidebandsiliconnxp
https://www.nxp.com/products/radio-frequency-rf/legacy-rf/legacy-rf-wideband-transistors/npn-wideband-silicon-germanium-rf-transistor:BFU710F?tab=Package_Quality_Tab
NPN wideband silicon RF transistor | NXP Semiconductors
High-gain SiGe RF transistor delivers optimal noise performance at 2.4 GHz for low-power wireless applications in compact SOT343 package
rf transistornpnwidebandsiliconnxp
https://www.nxp.com/products/radio-frequency-rf/macro-remote-radio-head/1450-2200-mhz/2110-2170-mhz-59-w-avg-48-v-airfast-rf-power-gan-transistor:A3G20S350-01S?tab=Package_Quality_Tab
A3G20S350-01S|Airfast RF Power GaN Transistor | NXP Semiconductors
GaN transistor delivers 59W average output power and 25dB gain for 2110-2170 MHz macro remote radio head applications in 5G infrastructure
rf powergan transistor01snxpsemiconductors
https://www.electronicdesign.com/technologies/power/article/21772780/multiple-transistor-types-vie-for-rf-power-amplifier-sockets
Multiple Transistor Types Vie For RF Power-Amplifier Sockets | Electronic Design
While LDMOS power devices are going to low-cost plastic packages, GaAs HBTs are migrating to larger wafers to cut cost.
rf power amplifiermultipletransistortypesvie
https://www.nxp.com/products/radio-frequency-rf/macro-remote-radio-head/1450-2200-mhz/1800-2200-mhz-45-w-avg-48-v-airfast-rf-power-gan-transistor:A3G20S250-01S
A3G20S250-01S|Airfast RF Power GaN Transistor | NXP Semiconductors
High-efficiency GaN RF power transistor delivers 45W average output for 1800-2200 MHz base station applications with enhanced ruggedness
rf powergan transistor01snxpsemiconductors
https://www.nxp.com/products/radio-frequency-rf/rf-aerospace-and-defense/1-2700-mhz-125-w-cw-50-v-wideband-rf-power-gan-on-sic-transistor:MMRF5014H?tab=Package_Quality_Tab
MMRF5014H|RF Power GaN on SiC Transistor | NXP Semiconductors
GaN-on-SiC power transistor delivers superior thermal performance with 125 W CW output and 18 dB gain for defense and aerospace applications
rf powergansictransistornxp
https://www.nxp.com/products/radio-frequency-rf/macro-remote-radio-head/450-1000-mhz/a3v07h600-42n-616-870-mhz-112-w-avg-48-v-airfast-rf-power-ldmos-transistor:A3V07H600-42N?tab=Buy_Parametric_Tab
A3V07H600-42N 616-870 MHz 112 W Avg. 48 V Airfast RF Power LDMOS Transistor | NXP Semiconductors
High-power LDMOS transistor delivering 112W average output and 600W peak power for cellular infrastructure and professional radio applications
https://www.nxp.com/products/BFG10
NPN 2 GHz RF power transistor | NXP Semiconductors
NPN 2 GHz RF power transistor. Archived content is no longer updated and is made available for historical reference only.
rf power transistornpn2ghznxp
https://www.nxp.com/company/about-nxp/smarter-world-blog/BL-NEW-WIDEBAND-RF-GAN-TRANSISTOR
New Wideband RF GaN Transistor for Aerospace and Defense Communications | NXP Semiconductors
The MMRF5018HS wideband 125 W CW GaN on SiC RF power transistor is ideally suited for CW, pulse and wideband RF applications.
aerospace and defensegan transistor