https://openrepository.mephi.ru/entities/publication/071eca45-a5d5-4ad1-a563-c3f187ceacfa
Simulation of errors impulses from single ionizing particles in CMOS triple majority gates
© 2019 IEEE.This work presents the TCAD simulation of the 65-nm bulk CMOS Triple Majority Gate as resistant to the single-event transients. The charge...
triple majoritysimulationerrorsimpulsessingle
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