Robuta

Listing the profiles on the Molecular Beam Epitaxy Research Group site.

Atomic force microscopy is used to investigate a series of arsenic-mediated growth experiments in the molecular beam epitaxy of Ge on Si(00 1).

For more information about our facilities and research projects, please contact the lab director or manager. Our address is:

Reflectance is the fraction of incident electromagnetic power that is reflected at an interface.

Advanced Epi offers a range of destructive and non-destructive characterisation techniques for Group-IV semiconductors.

Riber is provider of Molecular Beam Epitaxy (MBE) equipment, tool to deposit material onto substrates to create the semiconductor structures.

Providing high-quality epitaxial wafers for over 45 years enabling world-class semiconductor research ABOUT US Access the Facility The National Epitaxy...

Molecular Beam Epitaxy is an epitaxy method for the thin-film deposition on single crystals.

Fabricate a wide range of high-performance power electronics devices on high-quality SiC wafers as large as 200 mm in diameter.