https://journal.kci.go.kr/jkcgct/archive/articleView?artiId=ART001885133
Effects of the V/III ratio on a-plane GaN epitaxial layer on r-plane sapphire grown by HVPE...
In this study, effects of the V/III ratio on a-plane GaN epitaxial on r-plane grown by HVPE have beeninvestigated. According to increasing of V/III ratio, the...
on a planeof theepitaxial layereffectsiii
https://intra.kth.se/en/administration/kalender/leveraging-hvpe-for-iii-v-si-integration-and-mid-infrared-photonic-device-fabrication-1.1193441?date=2022-10-14&orgdate=2022-08-02&length=1&orglength=152
Leveraging HVPE for III-V/Si Integration and Mid-Infrared Photonic Device Fabrication | KTH Intranet
mid infraredleveraginghvpeiiiintegration