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https://www.engadget.com/2015-02-05-scientists-build-silicon-transistor-just-one-atom-thick.html Scientists build silicon transistor just one atom thick Feb 5, 2015 - Step aside, graphene, "silicene" is the trendy new nano-material in town that could one day supercharge future tech. Scientists have created the world's first... silicon transistorjust onescientistsbuildatom https://www.nxp.com/products/radio-frequency-rf/legacy-rf/legacy-rf-wideband-transistors/npn-wideband-silicon-rf-transistor:BFU550A NPN Wideband Silicon RF Transistor | NXP Semiconductors Small-signal NPN wideband transistor delivers 18.5dB gain at 900 MHz with low noise figure and high transition frequency for RF amplifier applications rf transistornpnwidebandsiliconnxp https://www.nist.gov/publications/schottky-contact-silicon-nanowire-field-effect-transistor-test-structures Schottky-contact Silicon Nanowire Field Effect Transistor Test Structures | NIST field effect transistorschottky contactsilicon nanowireteststructures https://www.unibas.ch/en/News-Events/News/Uni-Research/Experiment-opens-door-for-millions-of-qubits-on-one-chip.html Researchers realize a two-qubit gate in a silicon transistor | University of Basel Researchers from the University of Basel and the NCCR SPIN have achieved the first controllable interaction between two hole spin qubits in a ... a two https://www.nxp.com/products/radio-frequency-rf/legacy-rf/legacy-rf-wideband-transistors/npn-wideband-silicon-rf-transistor:BFU550XR NPN Wideband Silicon RF Transistor | NXP Semiconductors Wideband silicon NPN RF transistor for low-noise amplifiers delivers high gain and stable performance up to 2 GHz in wireless communication systems rf transistornpnwidebandsiliconnxp https://www.invent.org/inductees/gordon-teal NIHF Inductee Gordon Teal Invented the Silicon Transistor National Inventors Hall of Fame Inductee Gordon Teal invented the first commercial silicon transistor, skyrocketing the company Texas Instruments. gordon tealnihfinducteeinventedsilicon https://www.nxp.com/products/radio-frequency-rf/legacy-rf/legacy-rf-wideband-transistors/npn-wideband-silicon-germanium-rf-transistor:BFU790F?tab=Buy_Parametric_Tab NPN Wideband Silicon Germanium RF Transistor | NXP Semiconductors High-performance SiGe transistor optimized for wideband amplification up to 2.5 GHz, delivering 18 dB gain for demanding RF applications silicon germaniumrf transistornpnwidebandnxp https://www.nxp.com/products/radio-frequency-rf/legacy-rf/legacy-rf-wideband-transistors/npn-wideband-silicon-rf-transistor:BFU590Q?tab=Package_Quality_Tab NPN wideband silicon RF transistor | NXP Semiconductors Silicon RF transistor BFU590Q delivers high gain up to 6GHz and low noise figure performance for mobile base station wireless applications rf transistornpnwidebandsiliconnxp https://www.electronicdesign.com/technologies/industrial/displays/article/21763392/silicon-germanium-transistor-achieves-record-speeds Silicon-Germanium Transistor Achieves Record Speeds | Electronic Design Research by IBM and Georgia Tech suggest that the upper bound for performance in silicon-germanium devices may be higher than originally expected. silicon germaniumtransistorachievesrecordspeeds https://www.infineon.com/part/BFY183-ES BFY183-ES - HiRel Silicon Bipolar Transistor technology | Infineon Technologies BFY183 (ES) is a HiRel microwave transistor for low-noise amplifiers. ESA qualified, fT=8GHz, F=2.3dB@2GHz. Find data sheet, parameters, and ordering. bipolar transistoreshirelsilicontechnology https://www.nxp.com/products/radio-frequency-rf/legacy-rf/legacy-rf-wideband-transistors/npn-wideband-silicon-germanium-rf-transistor:BFU768F NPN Wideband Silicon Germanium RF Transistor | NXP Semiconductors High-gain 2.5 GHz silicon germanium RF transistor delivers superior linearity and noise performance for wireless infrastructure applications silicon germaniumrf transistornpnwidebandnxp https://www.nxp.com/products/radio-frequency-rf/legacy-rf/legacy-rf-wideband-transistors/npn-wideband-silicon-germanium-rf-transistor:BFU730F?tab=Package_Quality_Tab NPN wideband silicon RF transistor | NXP Semiconductors High-performance SiGe RF transistor delivers 20 GHz gain and low noise for wireless infrastructure, cellular base stations and industrial applications rf transistornpnwidebandsiliconnxp https://www.infineon.com/part/BFY450-P BFY450-P - HiRel Silicon Bipolar Transistor technology | Infineon Technologies BFY450 (P) is a HiRel microwave transistor with 19dBm P-1dB, 16dB gain at 1.8GHz, and 20GHz fT. Perfect for medium power amplifiers. Find data and ordering... bipolar transistorhirelsilicontechnologyinfineon https://www.infineon.com/part/CHIP-T395-P CHIP-T395-P - HiRel Silicon Bipolar Transistor technology | Infineon Technologies CHIP T395 (P) is a HiRel Silicon Bipolar Transistor with high reliability, 40V Vceo, and 5A Ic. Find data sheet, parameters and ordering information. bipolar transistorchiphirelsilicontechnology https://refractor.io/science/toshibas-spintronics-transistor-and-a-new-storage-mechanism-in-silicon-come-to-life/ Toshiba's spintronics transistor and a new storage mechanism in silicon come to life Sep 20, 2024 - Dutch researchers developed a way to store electronic spin information into silicon, which could then be manipulated by a new spintronics transistor developed... https://hothardware.com/news/intel-evolution-transistor-video-silicon-innovation Intel's Evolution Of The Transistor Innovation Is A Fun Trip Down Silicon Memory Lane | HotHardware Mar 1, 2022 - We tend to take for granted that our PCs will turn on and the silicon inside them will dutifully crunch through whatever tasks we ask, but it's all the result... https://www.nxp.com/products/radio-frequency-rf/legacy-rf/legacy-rf-wideband-transistors/npn-wideband-silicon-germanium-rf-transistor:BFU730F NPN wideband silicon RF transistor | NXP Semiconductors High-performance SiGe RF transistor delivers 20 GHz gain and low noise for wireless infrastructure, cellular base stations and industrial applications rf transistornpnwidebandsiliconnxp https://www.infineon.com/part/BFY740B-01-P BFY740B-01-P - HiRel Silicon Bipolar Transistor technology | Infineon Technologies BFY740B-01 (P) is a microwave transistor with 0.7 dB noise at 1.8 GHz, 1.0 dB at 6 GHz, in a hermetically sealed package. Find parameters and details. bipolar transistor01hirelsilicontechnology https://www.nxp.com/products/radio-frequency-rf/legacy-rf/legacy-rf-wideband-transistors/npn-wideband-silicon-germanium-rf-transistor:BFU710F?tab=Package_Quality_Tab NPN wideband silicon RF transistor | NXP Semiconductors High-gain SiGe RF transistor delivers optimal noise performance at 2.4 GHz for low-power wireless applications in compact SOT343 package rf transistornpnwidebandsiliconnxp